Two-fluid hydrodynamic model for semiconductors

Hydrodynamic model for charge carriers involving strong ionization in semiconductors

A set of hydrodynamic equations modeling strong ionization in semiconductors is formally derived from a kinetic framework. To that purpose, a system of Boltzmann transport equations governing the distribution functions of conduction electrons and holes is considered. The charge carriers obey a degenerate gas statistics and their kinetic energy relations are arbitrary. The umklapp collisions are...

Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

Hydrodynamic instabilities in two-dimensional electron flow in ungated semiconductors are studied here. The driving force for the electrons is an imposed voltage difference that generates a unidimensional electric field inside the semiconductor and its surroundings. The governing equations are linearized for small perturbations around the steady-flow solution. The eigenvalue spectrum determinin...

Hydrodynamic coupling between two fluid membranes.

The coupled in-plane diffusion dynamics between point-particles embedded in stacked fluid membranes is investigated. We calculate the contributions to the coupling longitudinal and transverse diffusion coefficients due to particle motion within the different as well as the same membranes. The stacked geometry leads to a hydrodynamic coupling between the two membranes.

A Discrete BGK Approximation of Hydrodynamic Equations for Semiconductors

Global exponential stability of classical solutions to the hydrodynamic model for semiconductors

In this paper, the global well-posedness and stability of classical solutions to the multidimensional hydrodynamic model for semiconductors on the framework of Besov space are considered. We weaken the regularity requirement of the initial data, and improve some known results in Sobolev space. The local existence of classical solutions to the Cauchy problem is obtained by the regularized means ...